What is the working principle of zener diode?

Question

zener diode & its working principle

Answer 1

I assume you know something about solid state electronics? I don't really know much, other than what I have read in text books.



A diode is made up of 2 parts, say Silicon, one part is "Doped" to produce a net positive structure P and the second part is "Doped " to produce a net negative structure N. The diode will only conduct in one direction, P to N, unless the reverse voltage is exceeded.

A zener diode, also known as a breakdown or avalanche diode, is a PN junction, modified in it's manufacture to breakdown at a specific reverse voltage. It is connected with reverse polarity, ie. negative to the P portion and positive to the N portion.



When the design Reverse voltage is exceeded, an avalanche effect occures and the diode coducts heavily untill the reverse voltage drops to it's rated voltage.



A 12v zener diode will then maintain 12v at it's N portion, as long as the positive voltage is 12volt or more. Therefore it is very useful, in conjunction with a load resistor, as a simple form of voltage regulator, or surge protection and where a specific voltage output is required.



Hope this of use to you.

Answer 2

Working Of Zener Diode

Answer 3

Working principle of Zener Diode:



The working of Zener Diode, both in forward and reverse direction. I also illustrated it's working along with the V-I characteristics curve.

These special diodes behave in a forward or forward direction switched as normal silicon diodes. Their special properties they exhibit when operating in reverse or backward direction. Here, the diodes have a very limited breakdown voltage with a steep current increase. The diodes are doped so that under certain conditions a permanent operation in the area of the steep rise of the barrier characteristics is possible without destroying the part. These properties are especially simple circuits for voltage stabilization used.

The breakthrough in the stop band is obtained with the stabilization by a special diode doping. It can be diodes with breakdown voltages between 2 to 200 volts. From a certain reverse voltage suddenly many carriers are available. This observation can be explained by two effects, the Zener effect and avalanche effect.

The Zener effect



In highly doped silicon diodes breakdown voltages in the off region is less than 5 volts, provides the Zener effect for the increase in current. In the barrier layer, the electric field strength is so large that they create the electron pair bonds are broken in the crystal lattice association a certain voltage. In the barrier layer, charge carriers that constitute the Zener effect. In this case, taking the electrical conductivity of the barrier layer and the differential junction resistance decreases.



The avalanche effect



For breakdown voltages of greater than 6 volts results in the lightly doped silicon avalanche diode or avalanche effect the release of charge carriers in the barrier layer. The charge carriers are accelerated by the electric field of higher blocking voltage. In collisions with electrons of the atomic lattice bond more electrons are knocked free. These are also accelerated and can turn again to release electrons. This process of impact ionization is also called avalanche effect.

Both effects, the Zener and avalanche effect, overlap and destroy the semiconductor, unless certain limits are met.







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Answer 4

A Zener diode is a type of diode that permits current not only in the forward direction like a normal diode, but also in the reverse direction if the voltage is larger than the breakdown voltage known as "Zener knee voltage" or "Zener voltage".



Here is the step by step working principle of zener diode

http://www.allaboutcircuits.com/vol_3/chpt_3/11.html

Answer 5

Zener diodes work on the principle of essentially a constant voltage drop at a predetermined voltage (determined during manufacture).

Answer 6

The essential guideline behind the working of a zener diode lies in the reason for breakdown for a diode in converse one-sided condition. Typically there are two sorts of breakdown-Zener and Avalanche.

1.) Zener Breakdown

This sort of breakdown happens for a converse inclination voltage between 2 to 8V. Indeed, even at this low voltage, the electric field power is sufficiently solid to apply a power on the valence electrons of the molecule such that they are isolated from the cores. This outcomes in development of portable electron gap sets, expanding the stream of current over the gadget.

This sort of separate happens regularly for profoundly doped diode with low breakdown voltage and bigger electric field. As temperature builds, the valence electrons acquire vitality to disturb from the covalent bond and less measure of outside voltage is needed. Hence zener breakdown voltage diminishes with temperature.

2.) Torrential slide breakdown:

This kind of breakdown happens at the converse inclination voltage over 8V and higher. It happens for delicately doped diode with vast breakdown voltage. As minority charge bearers stream over the gadget, they have a tendency to crash into the electrons in the covalent bond and reason the covalent bond to upset. As voltage expands, the active vitality of the electrons additionally increments and the covalent bonds are all the more effectively upset, creating an increment in electron opening sets. The torrential slide breakdown voltage increments with temperature.

Answer 7

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Tunneling. A Zener diode contains a heavily doped p-n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material. This process is non-destructive whereas reverse biased breakdown in normal transistors can lead to localized overheating and consequent destruction of the transistor.

Answer 8

the working of a zener diode lies in the cause of breakdown for a diode in reverse biased condition. Normally there are two types of breakdown- Zener and Avalanche.



Zener Breakdown:-



This type of breakdown occurs for a reverse bias voltage between 2 to 8V. Even at this low voltage, the electric field intensity is strong enough to exert a force on the valence electrons of the atom such that they are separated from the nuclei. This results in formation of mobile electron hole pairs, increasing the flow of current across the device. Approximate value of this field is about 2*10^7 V/m.



This type of break down occurs normally for highly doped diode with low breakdown voltage and larger electric field. As temperature increases, the valence electrons gain more energy to disrupt from the covalent bond and less amount of external voltage is required. Thus zener breakdown voltage decreases with temperature.



Avalanche breakdown:-



This type of breakdown occurs at the reverse bias voltage above 8V and higher. It occurs for lightly doped diode with large breakdown voltage. As minority charge carriers (electrons) flow across the device, they tend to collide with the electrons in the covalent bond and cause the covalent bond to disrupt. As voltage increases, the kinetic energy (velocity) of the electrons also increases and the covalent bonds are more easily disrupted, causing an increase in electron hole pairs. The avalanche breakdown voltage increases with temperature.

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